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A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping

Abstract

Mechanism of resistive switching in metal oxide is a widely studied topic with both interests in fundamental physics and practical needs to improve device characteristics for memory based applications. Various experimental approaches were employed to reveal the different aspect of resistive switching, however, there is still debate on the switching mechanism due to the lack of nondestructive microscopic characterization tool to monitor the oxygen vacancies. In this study, a novel approach using photoluminescence (PL) mapping is developed to study the switching dynamics in metal oxides. By monitoring the emission properties with confocal PL system, information regarding the switching mechanism can be obtained. The nondestructive nature of this approach allow us to make comparison between difference switching conditions and endurance cycles. SrTiO3 based switching devices were used as demonstration. The distribution of oxygen vacancies can be positioned by mapping the integrated intensity of oxygen vacancy emission on transparent top electrode, and both interface switching and filament switching can be distinguished. Meanwhile, endurance study revealed a sudden rise in the emission intensity correlated to the device failure, which designates an abrupt increase in the localized density of oxygen vacancy that results an irreversible set process for the conductive filament.

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Publication details

The article was received on 22 Mar 2017, accepted on 09 Jun 2017 and first published on 14 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR02023F
Citation: Nanoscale, 2017, Accepted Manuscript
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    A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping

    X. H. Wang, B. Gao, H. Wu, X. Li, D. Hong, Y. Chen and H. Qian, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR02023F

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