Jump to main content
Jump to site search

Issue 25, 2017
Previous Article Next Article

Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures

Author affiliations

Abstract

Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I–II or II–I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

Graphical abstract: Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures

Back to tab navigation

Supplementary files

Publication details

The article was received on 19 Mar 2017, accepted on 26 Apr 2017 and first published on 02 May 2017


Article type: Paper
DOI: 10.1039/C7NR01952A
Citation: Nanoscale, 2017,9, 8616-8622
  •   Request permissions

    Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures

    Y. C. Huang, X. Chen, C. Wang, L. Peng, Q. Qian and S. F. Wang, Nanoscale, 2017, 9, 8616
    DOI: 10.1039/C7NR01952A

Search articles by author

Spotlight

Advertisements