Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.



Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Author affiliations

Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.

Graphical abstract: Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 02 Mar 2017, accepted on 10 Apr 2017 and first published on 12 Apr 2017


Article type: Paper
DOI: 10.1039/C7NR01501A
Citation: Nanoscale, 2017, Advance Article
  •   Request permissions

    Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

    J. Kwon, J. Lee, Y. Yu, C. Lee, X. Cui, J. Hone and G. Lee, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR01501A

Search articles by author