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Issue 18, 2017
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Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

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Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.

Graphical abstract: Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

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Publication details

The article was received on 02 Mar 2017, accepted on 10 Apr 2017 and first published on 12 Apr 2017


Article type: Paper
DOI: 10.1039/C7NR01501A
Citation: Nanoscale, 2017,9, 6151-6157
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    Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

    J. Kwon, J. Lee, Y. Yu, C. Lee, X. Cui, J. Hone and G. Lee, Nanoscale, 2017, 9, 6151
    DOI: 10.1039/C7NR01501A

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