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Nanopatterning of GeTe phase change films via heated-probe lithography

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Abstract

The crystallization of amorphous germanium telluride (GeTe) thin films is controlled with nanoscale resolution using the heat from a thermal AFM probe. The dramatic differences between the amorphous and crystalline GeTe phases yield embedded nanoscale features with strong topographic, electronic, and optical contrast. The flexibility of scanning probe lithography enables the width and depth of the features, as well as the extent of their crystallization, to be controlled by varying probe temperature and write speed. Together, these technologies suggest a new approach to nanoelectronic and opto-electronic device fabrication.

Graphical abstract: Nanopatterning of GeTe phase change films via heated-probe lithography

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Publication details

The article was received on 28 Feb 2017, accepted on 08 Jun 2017 and first published on 19 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR01482A
Citation: Nanoscale, 2017, Advance Article
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    Nanopatterning of GeTe phase change films via heated-probe lithography

    A. Podpirka, W. Lee, J. I. Ziegler, T. H. Brintlinger, J. R. Felts, B. S. Simpkins, N. D. Bassim, A. R. Laracuente, P. E. Sheehan and L. B. Ruppalt, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR01482A

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