Jump to main content
Jump to site search


High-efficiency inverted quantum dot light emitting diodes with enhanced hole injection

Abstract

Hybrid MoO3/HAT-CN is employed as the hole injection layers (HILs) in green inverted colloidal quantum dot light-emitting devices (QLEDs). The hybrid HILs can be easily prepared and are found to improve electroluminescent properties effectively. The best performance device has a HIL of 1.5 nm-thick MoO3/2.5 nm-thick HAT-CN and shows a turn-on voltage of 1.9 V, a maximum current efficiency (CEmax) of 41.3 cd A-1 and maximum external quantum efficiency of 9.72%. In comparison to the corresponding devices with the single MoO3 or HAT-CN interlayer, the CEmax is improved by 1.6 or 1.5 times, respectively. The measured electrical performance shows that hole-only devices with hybrid HILs have a smaller leakage current density at low driving voltage and much enhanced hole injection current than the devices with single interlayers. It indicates that much improved electroluminescent efficiency in green inverted QLEDs with Hybrid MoO3/HAT-CN orginates from the significant enhancement of hole injection efficiency and suppression of space change accumulation in quantum dot emitting region due to the improved balance of the charge carriers. The hybrid HILs can be extended to other color inverted QLEDs, which is favourable to a bright, high-efficient and color saturation devices for display applications.

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 26 Feb 2017, accepted on 18 Apr 2017 and first published on 20 Apr 2017


Article type: Paper
DOI: 10.1039/C7NR01414G
Citation: Nanoscale, 2017, Accepted Manuscript
  •   Request permissions

    High-efficiency inverted quantum dot light emitting diodes with enhanced hole injection

    L. Wang, Y. Lv, J. Lin, Y. Fan, J. Zhao, Y. wang and X. Liu, Nanoscale, 2017, Accepted Manuscript , DOI: 10.1039/C7NR01414G

Search articles by author