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Issue 24, 2017
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High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

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Abstract

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous GaN. The specific detectivity of our devices under UV-illumination reaches values of up to 5.3 × 1014 Jones. We attribute this high specific detectivity to the properties of the mesoporous GaN/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain. High detectivity along with a simple fabrication process endows these laterally mesoporous GaN photodetectors with great potential for applications that require selective detection of weak optical signals in the UV range.

Graphical abstract: High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

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Publication details

The article was received on 21 Feb 2017, accepted on 21 Mar 2017 and first published on 24 Mar 2017


Article type: Paper
DOI: 10.1039/C7NR01290J
Citation: Nanoscale, 2017,9, 8142-8148
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    High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

    L. Liu, C. Yang, A. Patanè, Z. Yu, F. Yan, K. Wang, H. Lu, J. Li and L. Zhao, Nanoscale, 2017, 9, 8142
    DOI: 10.1039/C7NR01290J

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