Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.



Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

Author affiliations

Abstract

This letter demonstrates a simple method to achieve high-yields of 1H semiconducting MoS2 monolayers in concentrated, colloidally-stable aqueous suspension. The method is based on oxidation suppression during the hydrothermal processing step used for metal-to-semiconductor phase reversion. Accompanying DFT calculations on elementary steps in the MoS2 wet oxidation reaction suggest that a two-site corrosion mechanism is responsible for the observed high reactivity and low stability of 1T metallic MoS2.

Graphical abstract: Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 17 Feb 2017, accepted on 07 Apr 2017 and first published on 07 Apr 2017


Article type: Communication
DOI: 10.1039/C7NR01193H
Citation: Nanoscale, 2017, Advance Article
  •   Request permissions

    Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

    Z. Wang, Y. Zhang, M. Liu, A. Peterson and R. H. Hurt, Nanoscale, 2017, Advance Article , DOI: 10.1039/C7NR01193H

Search articles by author