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Issue 17, 2017
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Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

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Abstract

This letter demonstrates a simple method to achieve high-yields of 1H semiconducting MoS2 monolayers in concentrated, colloidally-stable aqueous suspension. The method is based on oxidation suppression during the hydrothermal processing step used for metal-to-semiconductor phase reversion. Accompanying DFT calculations on elementary steps in the MoS2 wet oxidation reaction suggest that a two-site corrosion mechanism is responsible for the observed high reactivity and low stability of 1T metallic MoS2.

Graphical abstract: Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

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Publication details

The article was received on 17 Feb 2017, accepted on 07 Apr 2017 and first published on 07 Apr 2017


Article type: Communication
DOI: 10.1039/C7NR01193H
Citation: Nanoscale, 2017,9, 5398-5403
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    Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

    Z. Wang, Y. Zhang, M. Liu, A. Peterson and R. H. Hurt, Nanoscale, 2017, 9, 5398
    DOI: 10.1039/C7NR01193H

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