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Issue 24, 2017
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Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

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Abstract

We present the first demonstration of arsenic-rich InAs1−xPx (0 ≤ x ≤ 0.33) nanowire arrays grown on InP (111)B substrates by catalyst-free selective-area metal–organic chemical vapor deposition. It is shown that by introducing a thin InAs seeding layer prior to the growth of the nanowire, an extremely high vertical yield is achieved by eliminating rotational twins between (111)A and (111)B crystal orientations. InAsP nanowire arrays show strong emission of photoluminescence (PL) at room temperature, suggesting a significant reduction of surface state density compared with InAs nanowires. The phosphorus composition deduced from the PL peak energy is verified by energy-dispersive X-ray spectroscopy. The growth temperature shows a strong impact on the aspect ratio of InAs1−xPx nanowires with different phosphorus compositions. In addition, no PL emission is observed from nanowires grown with arsenic overpressure, likely due to an exchange of phosphorus with arsenic atoms at the surface which results in an increase in the surface state density. These results provide a path for the growth of heterojunctions based on As-rich InAs1−xPx for nanoscale short-wavelength infrared and mid-wavelength infrared optical devices.

Graphical abstract: Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

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Publication details

The article was received on 08 Feb 2017, accepted on 14 May 2017 and first published on 16 May 2017


Article type: Paper
DOI: 10.1039/C7NR00948H
Citation: Nanoscale, 2017,9, 8220-8228
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    Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

    D. Ren, A. C. Farrell, B. S. Williams and D. L. Huffaker, Nanoscale, 2017, 9, 8220
    DOI: 10.1039/C7NR00948H

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