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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology


Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

Corresponding authors
Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
E-mail: miaoxs@hust.edu.cn
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
E-mail: tcchang3708@gmail.com
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Nanoscale, 2017, Advance Article

DOI: 10.1039/C7NR00934H
Received 08 Feb 2017, Accepted 15 Feb 2017
First published online 16 Feb 2017
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