Jump to main content
Jump to site search

Nanoscale

A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology

Paper

Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

*
Corresponding authors
a
Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
E-mail: miaoxs@hust.edu.cn
b
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
c
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
E-mail: tcchang3708@gmail.com
d
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
e
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
f
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Nanoscale, 2017, Advance Article

DOI: 10.1039/C7NR00934H
Received 08 Feb 2017, Accepted 15 Feb 2017
First published online 16 Feb 2017
Please wait while Download options loads
 
 
This article has not yet been cited.

Supplementary Info