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Issue 12, 2017
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Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy

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Abstract

Bilayer graphene (BLG) shows great potential as a new material for opto-electronic devices because its bandgap can be controlled by varying the stacking orders, as well as by applying an external electric field. An imaging technique that can visualize and characterize various stacking domains in BLG may greatly help in fully utilizing such properties of BLG. Here we demonstrate that infrared (IR) scattering-type scanning near-field optical microscopy (sSNOM) can visualize Bernal and non-Bernal stacking domains of BLG, based on the stacking-specific inter- and intra-band optical conductivities. The method enables nanometric mapping of stacking domains in BLG on dielectric substrates, augmenting current limitations of Raman spectroscopy and electron microscopy techniques for the structural characterization of BLG.

Graphical abstract: Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy

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Publication details

The article was received on 31 Jan 2017, accepted on 24 Feb 2017, published on 27 Feb 2017 and first published online on 27 Feb 2017


Article type: Paper
DOI: 10.1039/C7NR00713B
Citation: Nanoscale, 2017,9, 4191-4195
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    Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy

    G. Jeong, B. Choi, D. Kim, S. Ahn, B. Park, J. H. Kang, H. Min, B. H. Hong and Z. H. Kim, Nanoscale, 2017, 9, 4191
    DOI: 10.1039/C7NR00713B

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