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Issue 24, 2017
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Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO2 nanobeams

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Abstract

We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal–insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.

Graphical abstract: Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO2 nanobeams

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Publication details

The article was received on 14 Jan 2017, accepted on 25 May 2017 and first published on 05 Jun 2017


Article type: Paper
DOI: 10.1039/C7NR00318H
Citation: Nanoscale, 2017,9, 8200-8206
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    Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO2 nanobeams

    J. I. Sohn, S. N. Cha, S. B. Son, J. M. Kim, M. E. Welland and W. Hong, Nanoscale, 2017, 9, 8200
    DOI: 10.1039/C7NR00318H

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