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Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

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Abstract

Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfOx/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

Graphical abstract: Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

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Publication details

The article was received on 07 Nov 2016, accepted on 08 Feb 2017 and first published on 02 Mar 2017


Article type: Paper
DOI: 10.1039/C6NR08687J
Citation: Nanoscale, 2017, Advance Article
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    Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

    J. Shang, W. Xue, Z. Ji, G. Liu, X. Niu, X. Yi, L. Pan, Q. Zhan, X. Xu and R. Li, Nanoscale, 2017, Advance Article , DOI: 10.1039/C6NR08687J

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