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Nanoscale

A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology

Paper

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

Jie Shang,abc   Wuhong Xue,abc   Zhenghui Ji,bc   Gang Liu,*bc   Xuhong Niu,bc   Xiaohui Yi,bc   Liang Pan,bc   Qingfeng Zhan,bc   Xiao-Hong Xu*a and   Run-Wei Li*bc  
*
Corresponding authors
a
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, China
E-mail: xuxh@dns.sxnu.edu.cn
b
CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
E-mail: liug@nimte.ac.cn, runweili@nimte.ac.cn
c
Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
Nanoscale, 2017, Advance Article

DOI: 10.1039/C6NR08687J
Received 07 Nov 2016, Accepted 08 Feb 2017
First published online 02 Mar 2017
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