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Issue 20, 2017
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Novel single-source precursors for SiBxCyNz film deposition

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Abstract

Novel CVD precursors for SiBxCyNz film deposition such as HC[triple bond, length as m-dash]CB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiC[triple bond, length as m-dash]CB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiC[triple bond, length as m-dash]CB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27–1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.

Graphical abstract: Novel single-source precursors for SiBxCyNz film deposition

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Publication details

The article was received on 13 May 2017, accepted on 03 Sep 2017 and first published on 04 Sep 2017


Article type: Paper
DOI: 10.1039/C7NJ01651D
Citation: New J. Chem., 2017,41, 11926-11933
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    Novel single-source precursors for SiBxCyNz film deposition

    I. S. Merenkov, B. A. Gostevskii, P. O. Krasnov, T. V. Basova, Y. M. Zhukov, I. A. Kasatkin, S. V. Sysoev, V. I. Kosyakov, M. N. Khomyakov and M. L. Kosinova, New J. Chem., 2017, 41, 11926
    DOI: 10.1039/C7NJ01651D

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