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Issue 12, 2017
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High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

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Abstract

Achieving high responsivity for a self-powered ultraviolet (UV) photodetector is challenging. Herein, we report a high responsivity self-powered UV photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer whose responsivity reached as high as 176 mA W−1 at 300 nm, which is larger than the values of previously reported ZnO-based self-powered UV PDs. Moreover, based on the optimized CdS thickness with 5 cycle times, more than 1000 for the Iph/Idark ratio at the reverse biases was achieved. The device showed a good visible-blind UV photoresponse characteristic with the UV-visible responsivity ratio (R300nm/R500nm) reaching 48. Moreover, below the 350 nm UV region, the detectivity of the ZnO/CdS core–shell array PD was above 1012 cm Hz1/2 W−1, which is equivalent to that of the commercially available UV-enhanced Si photodiodes. The excellent photoelectric properties of the n-ZnO/CdS/p-GaN structure described above is due to the CdS insert layer, which was used as a carrier transition layer and realized a stepped energy level structure to effectively reduce the interfacial charge recombination and facilitate electron transfer.

Graphical abstract: High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

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Publication details

The article was received on 07 Apr 2017, accepted on 08 May 2017 and first published on 08 May 2017


Article type: Paper
DOI: 10.1039/C7NJ01140G
Citation: New J. Chem., 2017,41, 4901-4907
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    High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

    H. Zhou, P. Gui, L. Yang, C. Ye, M. Xue, J. Mei, Z. Song and H. Wang, New J. Chem., 2017, 41, 4901
    DOI: 10.1039/C7NJ01140G

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