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Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer

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Abstract

Lead chalcogenide colloidal quantum dots (QDs) are potential candidates for applications effective in the near infrared spectral range. Photoanodes were sensitized with PbS/CdS/CdSe/ZnS and PbS/CdS/CdSe/ZnSe via a simple successive ion layer adsorption and reaction (SILAR) technique. In the present study, ZnSe was used as an alternative to ZnS. ZnSe was deposited on a TiO2/PbS/CdS/CdSe photoanode, which was more efficient in reducing electron recombination in the QDSSCs. The performance of the QDSSCs was scrutinized using a polysulfide electrolyte and a copper sulfide counter electrode. The PbS/CdS/CdSe/ZnSe electrode resulted in enhanced efficiency as compared to the PbS/CdS/CdSe/ZnS-sensitized QDs. Red shifts with PbS/CdS/CdSe/ZnSe were observed, which were attributed to the combined effect of QDs. This was confirmed via photovoltaic studies and electrochemical impedance spectroscopy. The PbS/CdS/CdSe/ZnSe electrode exhibits a short circuit current density of 17.53 mA cm2 with an enhanced power to conversion efficiency (η) of 4.15% under 1 Sun illumination (AM 1.5G, 100 mW cm−2).

Graphical abstract: Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer

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Publication details

The article was received on 20 Feb 2017, accepted on 19 May 2017 and first published on 22 May 2017


Article type: Paper
DOI: 10.1039/C7NJ00600D
Citation: New J. Chem., 2017, Advance Article
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    Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer

    A. Subramanian, D. Punnoose, S. S. Rao, C. Venkata Thulasi Varma, B. Naresh, V. Raman and H. Kim, New J. Chem., 2017, Advance Article , DOI: 10.1039/C7NJ00600D

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