Using rare earth ions to improve the luminescence properties of the defect-related luminescent material Zn3Al2Ge2O10

Abstract

Herein, Zn₃Al₂Ge₂O₁₀ was synthesized by a high-temperature solid-state method, and a weak white emission ranging from 350 to 600 nm was observed. To enhance the white emission intensity of Zn₃Al₂Ge₂O₁₀, rare earth ions (Eu³⁺, Ce³⁺, Dy³⁺, and Tb³⁺) were introduced into Zn₃Al₂Ge₂O₁₀. The results show that the white emission intensity of Zn₃Al₂Ge₂O₁₀ is enhanced by doping rare earth ions, which is ascribed to the increased oxygen vacancy . Especially, Eu³⁺ ions can effectively enhance the white emission intensity of Zn₃Al₂Ge₂O₁₀ as compared to other rare earth ions (Ce³⁺, Dy³⁺, and Tb³⁺) when doped in Zn₃Al₂Ge₂O₁₀, and the intensity is maximum when the doping concentration reaches 6 mol%. The results indicate that the luminescence properties of the defect-related luminescent material Zn₃Al₂Ge₂O₁₀ can be improved by doping rare earths ions.