Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.



A unified understanding of charge transport in organic semiconductors: the importance of attenuated delocalization for the carriers

Author affiliations

Abstract

The variety of charge transport theories for organic semiconductors (OSCs) raises the question of which models should be selected for each case, and there is a lack of generalized understanding regarding various OSCs over the full range of crystallinity from single crystal to amorphous. Here, we report that the generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with various crystallinities, by altering the variance of the density of states and the delocalization degree in a Gaussian-distributed density of states. The GER also provides a good fitting to much of the experimental data of temperature- and gate-voltage-dependent mobility for different OSCs in transistors. Consequently, disorders of charge transport in various OSCs can be directly compared in the same map, which reveals how energetic disorder and the delocalization degree determine charge transport in organic devices.

Graphical abstract: A unified understanding of charge transport in organic semiconductors: the importance of attenuated delocalization for the carriers

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 16 Feb 2017, accepted on 27 Mar 2017 and first published on 27 Mar 2017


Article type: Communication
DOI: 10.1039/C7MH00091J
Citation: Mater. Horiz., 2017, Advance Article
  •   Request permissions

    A unified understanding of charge transport in organic semiconductors: the importance of attenuated delocalization for the carriers

    C. Liu, K. Huang, W. Park, M. Li, T. Yang, X. Liu, L. Liang, T. Minari and Y. Noh, Mater. Horiz., 2017, Advance Article , DOI: 10.1039/C7MH00091J

Search articles by author