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Temperature dependence of emission intensity in femtosecond laser-induced Ge plasma

Abstract

The femtosecond laser-induced breakdown spectroscopy (LIBS) of Ge at different initial sample temperature is investigated. The spectral intensity of Ge (I) 422.66 nm is shown to decrease with increasing temperature. Higher spectral emission intensity with 800 nm laser wavelength is observed in comparison to 400 nm laser wavelength. In order to understand this result, the transient relative reflectivity of semiconductor Ge sample under different temperatures is measured by ultrafast time-resolved pump-probe experiment. It is found that the change in the transient reflectivity of Ge at higher temperature is less than that at lower temperature, which may be the main reason for the decrease of spectral emission intensity.

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Publication details

The article was received on 08 May 2017, accepted on 27 Oct 2017 and first published on 01 Nov 2017


Article type: Paper
DOI: 10.1039/C7JA00179G
Citation: J. Anal. At. Spectrom., 2017, Accepted Manuscript
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    Temperature dependence of emission intensity in femtosecond laser-induced Ge plasma

    X. Wang, A. Chen, L. Sui, Y. Wang, D. Zhang, S. Li, Y. Jiang and M. Jin, J. Anal. At. Spectrom., 2017, Accepted Manuscript , DOI: 10.1039/C7JA00179G

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