Jump to main content
Jump to site search

Issue 7, 2017
Previous Article Next Article

Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se

Author affiliations

Abstract

High thermoelectric figure of merit, ZT ∼ 2.1 at 1000 K, have been reported in Cu2−xSe-based materials. However, their deployments in operational devices have been hampered by chemical instability and low average ZT (ZTave) values. Here, we demonstrate improved chemical stability and a record high ZTave ∼ 1.5 over a broad temperature range (T ≤ 850 K) in Cu2Se/CuInSe2 nanocomposites, with ZT values ranging from 0.6 at 450 K to an unprecedentedly large value of 2.6 at 850 K for the sample with 1 mol% In. This remarkable performance is attributed to the localization of Cu+ ions induced by the incorporation of In into the Cu2Se lattice, which simultaneously boost the electrical conductivity and reduce the thermal conductivity of the nanocomposites. These findings pave the way for large-scale utilization of Cu2Se-based materials in thermoelectric generators.

Graphical abstract: Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se

Back to tab navigation

Supplementary files

Publication details

The article was received on 02 May 2017, accepted on 19 Jun 2017 and first published on 19 Jun 2017


Article type: Paper
DOI: 10.1039/C7EE01193H
Citation: Energy Environ. Sci., 2017,10, 1668-1676
  •   Request permissions

    Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se

    A. A. Olvera, N. A. Moroz, P. Sahoo, P. Ren, T. P. Bailey, A. A. Page, C. Uher and P. F. P. Poudeu, Energy Environ. Sci., 2017, 10, 1668
    DOI: 10.1039/C7EE01193H

Search articles by author

Spotlight

Advertisements