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Fluctuated population of Sm 4f configurations in topological Kondo insulator SmB6 explored with high-resolution x-ray absorption and emission spectra

Abstract

High-resolution partial-fluorescence-yield x-ray absorption and resonant x-ray emission spectra were used to characterize the temperature dependence of the Sm 4f configurations and orbital/charge degree of freedom in SmB6. The variation of the Sm 4f configurations responds well to the formed Kondo gap, below 140 K, and an in-gap state, below 40 K. The topological in-gap state is correlated with the fluctuated population of Sm 4f configurations that arises via carrier transfer between 3d94f6 and 3d94f5 states; both states are partially delocalized, and the mediating 5d orbital plays the role of a transfer path. Complementary results shown in this work thus manifest the importance of configuration fluctuation and orbital delocalization in the topological surface state of SmB6.

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Publication details

The article was received on 05 Jun 2017, accepted on 07 Aug 2017 and first published on 07 Aug 2017


Article type: Paper
DOI: 10.1039/C7DT02039B
Citation: Dalton Trans., 2017, Accepted Manuscript
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    Fluctuated population of Sm 4f configurations in topological Kondo insulator SmB6 explored with high-resolution x-ray absorption and emission spectra

    J. Lee, S. Haw, S. Chen, S. Chen, H. Ishii, K. -D. Tsuei, H. Nozomu, Y. Liao, K. Lu and J. Chen, Dalton Trans., 2017, Accepted Manuscript , DOI: 10.1039/C7DT02039B

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