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Issue 9, 2017
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Luminescent YbVO4 by atomic layer deposition

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Abstract

UV to visible and near-infrared converting thin films of YbVO4 have been deposited by atomic layer deposition, using the precursor combinations Yb(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O3, and VO(thd)2 and O3 at a deposition temperature of 240 °C, followed by post deposition annealing at 400–1000 °C. The UV absorption and the visible and near-infrared emission have been investigated in detail. The structure, thickness and composition of the deposited films have been studied by X-ray diffraction, ellipsometry, and X-ray fluorescence, respectively. The optimal pulse ratio of Yb(thd)3 and VO(thd)2 with respect to near-infrared emission was found to be 1 : 3, which also yielded the most crystalline sample after annealing. Crystallization of the films is accelerated when an excess of V2O5 is present, enabling crystallization at temperatures as low as 500 °C, probably through a flux aided process.

Graphical abstract: Luminescent YbVO4 by atomic layer deposition

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Publication details

The article was received on 20 Jan 2017, accepted on 06 Feb 2017 and first published on 15 Feb 2017


Article type: Paper
DOI: 10.1039/C7DT00253J
Citation: Dalton Trans., 2017,46, 3008-3013
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    Luminescent YbVO4 by atomic layer deposition

    M. Getz, P. Hansen, M. A. K. Ahmed, H. Fjellvåg and O. Nilsen, Dalton Trans., 2017, 46, 3008
    DOI: 10.1039/C7DT00253J

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