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Atomic layer deposition of Cu(I) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

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Abstract

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal–oxide films featuring Cu(I).

Graphical abstract: Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water

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Publication details

The article was received on 27 Jun 2016, accepted on 03 Apr 2017 and first published on 03 Apr 2017


Article type: Communication
DOI: 10.1039/C6DT02572B
Citation: Dalton Trans., 2017, Advance Article
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    Atomic layer deposition of Cu(I) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

    J. R. Avila, A. W. Peters, Z. Li, M. A. Ortuño, A. B. F. Martinson, C. J. Cramer, J. T. Hupp and O. K. Farha, Dalton Trans., 2017, Advance Article , DOI: 10.1039/C6DT02572B

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