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Issue 48, 2017
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Termination of Ge surfaces with ultrathin GeS and GeS2 layers via solid-state sulfurization

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Abstract

Reactions of Ge with S vapor, of interest as a potential approach for forming thin passivation layers on Ge surfaces, have been studied by photoelectron spectroscopy and Raman spectroscopy. Exposure of Ge(100) and Ge(111) to S drives the formation of Ge sulfide near-surface layers. At low temperatures, the reaction products comprise a thin GeS interlayer terminated by near-surface GeS2. Above 400 °C, exposure to sulfur gives rise to single-phase GeS2 layers whose thickness increases with temperature. Arrhenius analysis of the GeS2 thickness yields an activation energy (0.63 ± 0.08) eV, close to the barrier that controls Ge oxidation by O radicals. XPS measurements after extended ambient exposure show a stable, ultrathin near-surface GeS2 without significant oxidation, indicating that Ge–sulfides may provide an effective surface passivation for Ge surfaces.

Graphical abstract: Termination of Ge surfaces with ultrathin GeS and GeS2 layers via solid-state sulfurization

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Publication details

The article was received on 02 Sep 2017, accepted on 24 Nov 2017 and first published on 29 Nov 2017


Article type: Paper
DOI: 10.1039/C7CP05990F
Citation: Phys. Chem. Chem. Phys., 2017,19, 32473-32480
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    Termination of Ge surfaces with ultrathin GeS and GeS2 layers via solid-state sulfurization

    H. Chen, C. Keiser, S. Du, H. Gao, P. Sutter and E. Sutter, Phys. Chem. Chem. Phys., 2017, 19, 32473
    DOI: 10.1039/C7CP05990F

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