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Spin-dependent electron transport in C and Ge doped BN monolayers

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Abstract

Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We find that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

Graphical abstract: Spin-dependent electron transport in C and Ge doped BN monolayers

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Publication details

The article was received on 16 Aug 2017, accepted on 27 Oct 2017 and first published on 30 Oct 2017


Article type: Paper
DOI: 10.1039/C7CP05596J
Citation: Phys. Chem. Chem. Phys., 2017, Advance Article
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    Spin-dependent electron transport in C and Ge doped BN monolayers

    S. K. Gupta, H. He, I. Lukačević and R. Pandey, Phys. Chem. Chem. Phys., 2017, Advance Article , DOI: 10.1039/C7CP05596J

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