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Issue 39, 2017
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The electronic structure of Ag1−xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25 and 1.0)

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Abstract

We have studied the valence electronic structure of Ag1−xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25) and SnSe (x = 1.0) by a combined analysis of X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS) measurements. Both XAS and XPS reveal an increase in electron carriers in the system with x (i.e. excess Sn concentration) for 0 ≤ x ≤ 0.25. The core-level spectra (Sn 3d, Ag 3d and Se 3d) show that the charge state of Ag is almost 1+, while that of of Sn splits into Sn2+ and Sn4+ (providing clear evidence of valence skipping for the first time) with a concomitant splitting of Se into Se2− and Se2−δ states. The x dependence of the split components in Sn and Se together with the Se-K edge XAS reveals that the Se valence state may have an essential role in the transport properties of this system.

Graphical abstract: The electronic structure of Ag1−xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25 and 1.0)

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Publication details

The article was received on 08 Aug 2017, accepted on 22 Sep 2017 and first published on 22 Sep 2017


Article type: Paper
DOI: 10.1039/C7CP05369J
Citation: Phys. Chem. Chem. Phys., 2017,19, 26672-26678
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    The electronic structure of Ag1−xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25 and 1.0)

    T. Wakita, E. Paris, K. Kobayashi, K. Terashima, M. Y. Hacisalihoǧlu, T. Ueno, F. Bondino, E. Magnano, I. Píš, L. Olivi, J. Akimitsu, Y. Muraoka, T. Yokoya and N. L. Saini, Phys. Chem. Chem. Phys., 2017, 19, 26672
    DOI: 10.1039/C7CP05369J

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