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Voltage dependent admittance spectroscopy for the detection of near interface defect states for thin film solar cells

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Abstract

Recently recorded efficiencies of Cu(In,Ga)Se2 based solar cells were mainly achieved by surface treatment of the absorber that modifies the buffer–absorber interface region. However, only little is known about the electronic properties within this region. In this manuscript voltage dependent admittance spectroscopy is applied to low temperature grown Cu(In,Ga)Se2 based solar cells to detect near interface defect states in the absorber. Under non-equilibrium conditions even defect states close to the interface may cross the Fermi level and hence are detectable using capacitance based measurement methods, in contrast to the case of zero bias conditions. Such defects are of potential importance for understanding device limitations and hence, adequate characterization is necessary. A SCAPS model is developed including a near interface deep acceptor state, which explains the frequency and voltage dependence of the capacitance. Using the same model, also the experimental apparent doping density is explained.

Graphical abstract: Voltage dependent admittance spectroscopy for the detection of near interface defect states for thin film solar cells

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Publication details

The article was received on 02 Aug 2017, accepted on 19 Sep 2017 and first published on 13 Nov 2017


Article type: Paper
DOI: 10.1039/C7CP05236G
Citation: Phys. Chem. Chem. Phys., 2017, Advance Article
  • Open access: Creative Commons BY license
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    Voltage dependent admittance spectroscopy for the detection of near interface defect states for thin film solar cells

    T. P. Weiss, S. Nishiwaki, B. Bissig, S. Buecheler and A. N. Tiwari, Phys. Chem. Chem. Phys., 2017, Advance Article , DOI: 10.1039/C7CP05236G

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