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Amplification or Cancellation of Fano Resonance and Quantum Confinement Induced Asymmetries in Raman Line-Shapes

Abstract

Fano resonance is reported here to be playing a dual role by amplifying or compensating for the quantum confinement effect induced asymmetry in Raman line-shape in silicon (Si) nanowires (NWs) obtained from heavily doped n- and p-type Si wafers respectively. The compensatory nature results in a near symmetric Raman line-shape from heavily doped p-type Si nanowires (NWs) as both the components almost cancels each other. On the other hand, expected asymmetry, rather with enhancement, has been observed from heavily doped n- type SiNWs. Such a system (p- & n-) dependent Raman line-shape study has been carried out by theoretical line-shape analysis followed by experimental validation through suitably designed experiments. A dual role of Fano resonance in n- and p- type nano system has been observed to modulate Raman spectra differently and reconcile accordingly to enhance and cease the Raman spectral asymmetry respectively. Present analysis will enable one to be more careful while analyzing a symmetric Raman line-shape from semiconductor nanostructures.

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Publication details

The article was received on 18 Jul 2017, accepted on 13 Nov 2017 and first published on 13 Nov 2017


Article type: Paper
DOI: 10.1039/C7CP04836J
Citation: Phys. Chem. Chem. Phys., 2017, Accepted Manuscript
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    Amplification or Cancellation of Fano Resonance and Quantum Confinement Induced Asymmetries in Raman Line-Shapes

    S. K. Saxena, P. Yogi, S. Mishra, H. M. Rai, V. Mishra, K. Warshi, S. Roy, P. Mondal, P. R. Sagdeo and R. Kumar, Phys. Chem. Chem. Phys., 2017, Accepted Manuscript , DOI: 10.1039/C7CP04836J

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