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Interfacial Properties of Borophene Contacts with Two-dimensional Semiconductors

Abstract

Interfacial properties of β12 phase of borophene contacts with other common two-dimensional materials (transition-metal dichalcogenides, group IV-enes and group V-enes) have been systematically studied by density functional theory (DFT) method. Zero tunneling barrier is found in all the checked β12 phase of borophene contacts except for the case of β12 borophene/graphene. The chemically reactive properties and high work function (4.9 eV) of the stable β12 borophene lead to the formation of Ohmic contacts with silicene, germanene, stanene, black phosphorene, arsenene and antimonene. The advantage of the zero tunnel barrier remains when changing the borophene from β12 to Δ phases. Therefore, a high carrier injection rate is expected in these borophene contacts. Our study provides a guidance of borophene for future two dimensional materials based device designs.

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Publication details

The article was accepted on 10 Aug 2017 and first published on 11 Aug 2017


Article type: Paper
DOI: 10.1039/C7CP04570K
Citation: Phys. Chem. Chem. Phys., 2017, Accepted Manuscript
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    Interfacial Properties of Borophene Contacts with Two-dimensional Semiconductors

    J. Yang, R. Quhe, S. Feng, Q. Zhang, M. Lei and J. Lu, Phys. Chem. Chem. Phys., 2017, Accepted Manuscript , DOI: 10.1039/C7CP04570K

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