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Issue 35, 2017
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Interfacial properties of borophene contacts with two-dimensional semiconductors

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Abstract

The interfacial properties of β12 phase borophene contacts with other common two-dimensional materials (transition-metal dichalcogenides, group IV-enes and group V-enes) have been systematically studied using a density functional theory (DFT) method. The zero tunneling barrier is found for all of the investigated β12 phase borophene contacts except for the case of β12 borophene/graphene. The chemically reactive properties and high work function (4.9 eV) of the stable β12 borophene lead to the formation of Ohmic contacts with silicene, germanene, stanene, black phosphorene, arsenene and antimonene. The advantage of the zero tunnel barrier remains when changing the borophene from the β12 phase to the Δ phase. Therefore, a high carrier injection rate is expected in these borophene contacts. Our study provides guidance on borophene for future two dimensional materials based device designs.

Graphical abstract: Interfacial properties of borophene contacts with two-dimensional semiconductors

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Publication details

The article was received on 07 Jul 2017, accepted on 10 Aug 2017 and first published on 11 Aug 2017


Article type: Paper
DOI: 10.1039/C7CP04570K
Citation: Phys. Chem. Chem. Phys., 2017,19, 23982-23989
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    Interfacial properties of borophene contacts with two-dimensional semiconductors

    J. Yang, R. Quhe, S. Feng, Q. Zhang, M. Lei and J. Lu, Phys. Chem. Chem. Phys., 2017, 19, 23982
    DOI: 10.1039/C7CP04570K

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