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Anisotropic carrier mobility in buckled two-dimensional GaN

Abstract

Developing nanoelectronic engineering requires two-dimensional (2d) materials with both usable carrier mobility and proper large band-gap. In this paper, we present a detailed theoretical investigation of the intrinsic carrier mobilities of buckled 2d GaN. This buckled 2d GaN is accessed by hydrofluorination (FGaNH) and hydrogenation (HGaNH). We predict that the anisotropic carrier mobilities of buckled 2d GaN can exceed that of 2d MoS2 and can be altered by alterable surface chemical bond (convert from Ga-F-Ga bond of FGaNH to Ga-H bond of HGaNH). What's more, converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from p-type-like semiconductor (FGaNH) to n-type-like semiconductor (HGaNH). These features make buckled 2d GaN a promising candidate for future conductivity-adjustable electronics.

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Publication details

The article was received on 19 Jun 2017, accepted on 10 Aug 2017 and first published on 10 Aug 2017


Article type: Paper
DOI: 10.1039/C7CP04117A
Citation: Phys. Chem. Chem. Phys., 2017, Accepted Manuscript
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    Anisotropic carrier mobility in buckled two-dimensional GaN

    L. Tong, J. He, M. Yang, Z. Chen, J. Zhang, Y. Lu and Z. Zhao, Phys. Chem. Chem. Phys., 2017, Accepted Manuscript , DOI: 10.1039/C7CP04117A

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