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Structural Stability and Electronic Properties of (SiH)2O-formed Siloxene Sheet: A Computational Study

Abstract

Very recently, a (SiH)2O-formed siloxene sheet has been synthesized in the experiment [S. Li, et al. J. Mater. Chem. A 2016, 4, 15841]. Utilizing first-principles calculations, we have systematically investigated the structural stability and physical properties of this (SiH)2O sheet. We have found the dynamically stable structure for it is a puckered one with bent Si-O-Si connections, which leads to an anisotropic elastic behaviour with negative Poisson ratios. The (SiH)2O sheet has a strain-tunable direct band gap whose valence and conduction band edges straddle the redox potentials of water even in the presence of stress (either tensile or compressive). The calculated carrier mobilities are prominently anisotropic: in its zigzag direction the electron mobility reaches a high value of 5.39×103 cm2/Vs, while the hole mobility remains small. These different carrier mobilities permit fast charge separation and transfer, what is crucial for efficient solar-to-electric energy conversion for photovoltaic and water splitting applications. Similar to phosphorene, a typical linear dichroism phenomenon is also present in the (SiH)2O sheet. Due to its outstanding electronic properties, the (SiH)2O sheet is a promising material in the fields of nano-electronics, sustainable energy and fuel generation.

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Publication details

The article was received on 16 May 2017, accepted on 19 Jun 2017 and first published on 19 Jun 2017


Article type: Paper
DOI: 10.1039/C7CP03250A
Citation: Phys. Chem. Chem. Phys., 2017, Accepted Manuscript
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    Structural Stability and Electronic Properties of (SiH)2O-formed Siloxene Sheet: A Computational Study

    Y. Wang and Y. Ding, Phys. Chem. Chem. Phys., 2017, Accepted Manuscript , DOI: 10.1039/C7CP03250A

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