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Issue 32, 2017
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Development of optimum p-nc-Si window layers for nc-Si solar cells

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Abstract

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD. At elevated gas pressure (p), the growth rate enhances; however, the optical band gap reduces. At optimum p = 2.5 Torr, a p-nc-Si window-layer possessing high crystallinity, large grain size, high electrical conductivity, wide optical band gap and a preferred 〈220〉 crystallographic orientation of the nanocrystallites is obtained. Single p–in junction nc-Si solar cells in superstrate configuration have been realized with reasonably acceptable conversion efficiency, η ∼ 7.05%. The preferred 〈220〉 oriented (I〈220〉/I〈111〉 ∼ 1.68) highly crystalline (XC ∼ 86%) p-nc-Si window-layer minimizes the lattice mismatch at the p/i-junction, facilitates the growth of proper crystallinity in the i-nc-Si absorber layer from its incubation stage during its sequential growth over the window layer and ensures low recombination losses for conduction of charge carriers along the vertical direction at the p/i-interface. Further improvement in cell efficiency sensitively depends on proper optimization and future ungradation of the i-nc-Si absorber layer, and the single junction nc-Si cell could play a significant role as an integral part of premium all-Si tandem structure solar cells.

Graphical abstract: Development of optimum p-nc-Si window layers for nc-Si solar cells

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Publication details

The article was received on 28 Apr 2017, accepted on 21 Jul 2017 and first published on 21 Jul 2017


Article type: Paper
DOI: 10.1039/C7CP02788E
Citation: Phys. Chem. Chem. Phys., 2017,19, 21357-21363
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    Development of optimum p-nc-Si window layers for nc-Si solar cells

    P. Mondal and D. Das, Phys. Chem. Chem. Phys., 2017, 19, 21357
    DOI: 10.1039/C7CP02788E

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