Jump to main content
Jump to site search

Issue 30, 2017
Previous Article Next Article

Ab initio performance predictions of single-layer In–V tunnel field-effect transistors

Author affiliations

Abstract

The device performances of both n-type and p-type tunnel field-effect transistors (TFETs) made of single-layer InX (X = N, P, As, Sb) are theoretically evaluated through density functional theory (DFT) and ab initio simulations in this paper. It is found that a promising steep subthreshold swing (SS) of ⩽ 60 mV dec−1 can be obtained with gate length LG = 15.2 nm for all two-dimensional (2D) InX TFETs. In particular, an outstanding on-current of ∼1058 μA μm−1 (or 880 μA μm−1) is estimated in a 2D p-type (or n-type) InSb device, which could barely satisfy the ITRS requirements for future high-performance (HP) applications. In addition, the 2D InAs p-type (or n-type) TFET containing a 15.2 nm gate length has great potential to be applied to the low-power (LP) devices with an ON–OFF ratio of ION/IOFF = 1.8 × 107 (or ION/IOFF = 1.9 × 107). However, the density-of-state bottleneck effect strongly influences the behavior of 2D InP and InN devices. Our results provide guidance for experimental synthesis and future designs of a single-layer material device with a steep inverse subthreshold slope, low OFF-, and high ON-current.

Graphical abstract: Ab initio performance predictions of single-layer In–V tunnel field-effect transistors

Back to tab navigation

Publication details

The article was received on 25 Apr 2017, accepted on 05 Jun 2017 and first published on 05 Jun 2017


Article type: Paper
DOI: 10.1039/C7CP02695A
Citation: Phys. Chem. Chem. Phys., 2017,19, 20121-20126
  •   Request permissions

    Ab initio performance predictions of single-layer In–V tunnel field-effect transistors

    J. Lu, Z. Fan, J. Gong and X. Jiang, Phys. Chem. Chem. Phys., 2017, 19, 20121
    DOI: 10.1039/C7CP02695A

Search articles by author

Spotlight

Advertisements