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Ab initio performance predictions of single-layer In-V tunnel field-effect transistors

Abstract

The device performances of both n-type and p-type tunnel field-effect transistors (TFETs) made of single-layer InX (X=N, P, As, Sb) are theoretically evaluated through density functional theory (DFT) and ab initio simulations in this paper. It is found that a promising steep subthreshold swing (SS) ≤ 60 mV/dec can be obtained with gate length LG=15.2 nm for all two dimensional (2D) InX TFETs. In particular, an outstanding on-current of ∼1058 μA/μm (or 880 μA/μm) is estimated in 2D p-type (or n-type) InSb device, which could barely satisfy the ITRS requirements for future high-performance (HP) applications. In addition, the 2D InAs p-type (or n-type) TFET containing a 15.2 nm gate length has great potential to be applied to the low-power (LP) devices with a ON-OFF ratio of ION/IOFF = 1.8×107 (or ION/IOFF = 1.9×107 ). However, the density-of-states bottleneck effect strongly influences the behavior of 2D InP and InN devices. Our results provide guidance for experimental synthesis and future designs of single-layer materials device with a steep inverse subthreshold slope, low OFF-, and high ON-current.

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Publication details

The article was received on 25 Apr 2017, accepted on 05 Jun 2017 and first published on 05 Jun 2017


Article type: Paper
DOI: 10.1039/C7CP02695A
Citation: Phys. Chem. Chem. Phys., 2017, Accepted Manuscript
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    Ab initio performance predictions of single-layer In-V tunnel field-effect transistors

    J. Lu, Z. Q. Fan, J. Gong and X. Jiang, Phys. Chem. Chem. Phys., 2017, Accepted Manuscript , DOI: 10.1039/C7CP02695A

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