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Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

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Abstract

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/detrapping of electrons at the BaTiO3–Cu interface. In addition, we demonstrate that the device exhibits good performance, including a large on/off ratio, high reliability and long retention time. Therefore, BaTiO3 may become a good candidate for application in resistive switching random access memory (RRAM) devices.

Graphical abstract: Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

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Publication details

The article was received on 07 Mar 2017, accepted on 07 Apr 2017 and first published on 07 Apr 2017


Article type: Paper
DOI: 10.1039/C7CP01461A
Citation: Phys. Chem. Chem. Phys., 2017, Advance Article
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    Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

    L. J. Wei, Y. Yuan, J. Wang, H. Q. Tu, Y. Gao, B. You and J. Du, Phys. Chem. Chem. Phys., 2017, Advance Article , DOI: 10.1039/C7CP01461A

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