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Issue 24, 2017
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Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

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Abstract

Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600 °C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700 °C). The spatial homogeneity of the monolayer graphene was observed at 1750 °C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements from room temperature down to 1.7 K indicated slightly p-doped samples (p ≃ 1010 cm−2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films.

Graphical abstract: Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

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Publication details

The article was received on 15 Feb 2017, accepted on 12 May 2017 and first published on 12 May 2017


Article type: Paper
DOI: 10.1039/C7CP01012E
Citation: Phys. Chem. Chem. Phys., 2017,19, 15833-15841
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    Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

    P. Landois, T. Wang, A. Nachawaty, M. Bayle, J. Decams, W. Desrat, A. Zahab, B. Jouault, M. Paillet and S. Contreras, Phys. Chem. Chem. Phys., 2017, 19, 15833
    DOI: 10.1039/C7CP01012E

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