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Paper

Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron–phonon coupling and confined optical field

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Corresponding authors
a
Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, P. R. China
E-mail: npan@ustc.edu.cn, xpwang@ustc.edu.cn
b
Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, P. R. China
c
Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, P. R. China
Phys. Chem. Chem. Phys., 2017, Advance Article

DOI: 10.1039/C7CP00973A
Received 14 Feb 2017, Accepted 10 Mar 2017
First published online 13 Mar 2017
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