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Issue 14, 2017
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Huge magnetoresistance induced by half-metal–semiconductor phase transition in a one-dimensional spin chain: a first-principles study

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Abstract

In experimental studies, magnetoresistance (MR) values of 103 are hard to reach for conventional single-molecule spin-valves. Motivated by a recent experiment [Nano Lett., 2016, 16, 577–582], where tailored Co-salophene-based all-spin molecular devices are successfully realized, we demonstrate the functionality of a Co-salophene-based spin chain without magnetic electrodes. By using nonequilibrium Green's functions in combination with density functional theory, we find that the maximum MR ratio of this spin chain can reach 106 by manipulating its spins in a controlled way, which is several orders of magnitude higher than previously reported experimental values. As the Co-salophene-based spin chain has been successfully synthesized, we are highly expectant of the experimental realization of huge MR ratios.

Graphical abstract: Huge magnetoresistance induced by half-metal–semiconductor phase transition in a one-dimensional spin chain: a first-principles study

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Publication details

The article was received on 29 Jan 2017, accepted on 09 Mar 2017 and first published on 10 Mar 2017


Article type: Paper
DOI: 10.1039/C7CP00641A
Citation: Phys. Chem. Chem. Phys., 2017,19, 9417-9423
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    Huge magnetoresistance induced by half-metal–semiconductor phase transition in a one-dimensional spin chain: a first-principles study

    J. Zeng and K. Chen, Phys. Chem. Chem. Phys., 2017, 19, 9417
    DOI: 10.1039/C7CP00641A

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