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Issue 20, 2017
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Triethanolamine doped multilayer MoS2 field effect transistors

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Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm2 V−1 s−1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.

Graphical abstract: Triethanolamine doped multilayer MoS2 field effect transistors

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The article was received on 26 Jan 2017, accepted on 11 Apr 2017 and first published on 10 May 2017

Article type: Paper
DOI: 10.1039/C7CP00589J
Citation: Phys. Chem. Chem. Phys., 2017,19, 13133-13139
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    Triethanolamine doped multilayer MoS2 field effect transistors

    M. Ryu, H. Jang, K. J. Lee, M. Piao, S. Ko, M. Shin, J. Huh and G. Kim, Phys. Chem. Chem. Phys., 2017, 19, 13133
    DOI: 10.1039/C7CP00589J

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