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Issue 13, 2017
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The oxidation kinetics of thin nickel films between 250 and 500 °C

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Abstract

The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500 °C for 10–150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient Image ID:c7cp00476a-t35.gif that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.

Graphical abstract: The oxidation kinetics of thin nickel films between 250 and 500 °C

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Publication details

The article was received on 21 Jan 2017, accepted on 28 Feb 2017 and first published on 17 Mar 2017


Article type: Paper
DOI: 10.1039/C7CP00476A
Citation: Phys. Chem. Chem. Phys., 2017,19, 9045-9052
  • Open access: Creative Commons BY license
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    The oxidation kinetics of thin nickel films between 250 and 500 °C

    Y. Unutulmazsoy, R. Merkle, D. Fischer, J. Mannhart and J. Maier, Phys. Chem. Chem. Phys., 2017, 19, 9045
    DOI: 10.1039/C7CP00476A

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