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Paper

Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films

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Corresponding authors
a
Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr K. S. Krishnan Marg, New Delhi-110012, India
E-mail: govind@nplindia.org
Tel: +91-1145608403
b
Advanced Materials and Devices, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi-110012, India
c
Apex Level Standards & Industrial Metrology, CSIR-National Physical Laboratory (CSIR-NPL), Dr K. S. Krishnan Marg, New Delhi-110012, India
d
Enviromental & Biomedical Metrology, CSIR-National Physical Laboratory (CSIR-NPL), Dr K. S. Krishnan Marg, New Delhi-110012, India
Phys. Chem. Chem. Phys., 2017, Advance Article

DOI: 10.1039/C7CP00380C
Received 18 Jan 2017, Accepted 04 Mar 2017
First published online 07 Mar 2017
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