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Paper

Effects of Ge and Sn substitution on the metal–semiconductor transition and thermoelectric properties of Cu12Sb4S13 tetrahedrite

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Corresponding authors
a
Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan
b
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Japan
E-mail: suekuni.koichiro.063@m.kyushu-u.ac.jp
c
Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
d
Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima, Japan
Phys. Chem. Chem. Phys., 2017, Advance Article

DOI: 10.1039/C7CP00351J
Received 17 Jan 2017, Accepted 06 Mar 2017
First published online 06 Mar 2017
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