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Effects of Ge and Sn substitution on the metal–semiconductor transition and thermoelectric properties of Cu12Sb4S13 tetrahedrite

Corresponding authors
Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Japan
E-mail: suekuni.koichiro.063@m.kyushu-u.ac.jp
Research Institute for Energy Conservation, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima, Japan
Phys. Chem. Chem. Phys., 2017, Advance Article

DOI: 10.1039/C7CP00351J
Received 17 Jan 2017, Accepted 06 Mar 2017
First published online 06 Mar 2017
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