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Issue 17, 2017
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Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

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Abstract

Resistive switching in metal–insulator–metal nanosctructures is being intensively studied for nonvolatile memory applications. Here, we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with a 30 nm oxide barrier. A forming process was needed to initiate the resistive switching, which was then observed for all Set and Reset voltage polarity combinations. We studied the influence of the voltage polarity on the variability of the Set/Reset voltages and ON/OFF resistances and revealed the importance of a thin TaOx layer working as an oxygen revervoir for resistive switching. The mechanism behind this phenomenon can be understood in terms of conductive filaments formation/rupture with a contribution from Joule heating. Resistance change is thus caused by a voltage-driven oxygen vacancy motion in the MgO layer and a filament model was proposed for each polarity mode. A OFF/ON resistance ratio of at least 2 orders of magnitude was obtained with resistive states stable up to 104 s. Our results open the prospect to improve switching performance in other resistive switching systems, by proving a better understanding of the differences between operation modes.

Graphical abstract: Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

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Publication details

The article was received on 04 Jan 2017, accepted on 05 Apr 2017 and first published on 05 Apr 2017


Article type: Paper
DOI: 10.1039/C7CP00062F
Citation: Phys. Chem. Chem. Phys., 2017,19, 10898-10904
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    Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

    C. Dias, Luís. M. Guerra, B. D. Bordalo, H. Lv, A. M. Ferraria, A. M. Botelho do Rego, S. Cardoso, P. P. Freitas and J. Ventura, Phys. Chem. Chem. Phys., 2017, 19, 10898
    DOI: 10.1039/C7CP00062F

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