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Paper

Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2

T. Alphazan,ab   P. Florianc and   C. Thieuleux*b  
*
Corresponding authors
a
Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France
b
C2P2, CPE Lyon, 43 Bd du 11 Nov. 1918, 69616 Villeurbanne cedex, France
E-mail: thieuleux@cpe.fr
c
Conditions Extrêmes et Matériaux: Haute Température et Irradiation, CNRS-UPR 3079, 1 d Avenue de la Recherche Scientifique, 45071 Orléans, Cedex 2, France
Phys. Chem. Chem. Phys., 2017,19, 8595-8601

DOI: 10.1039/C6CP08583K
Received 16 Dec 2016, Accepted 19 Feb 2017
First published online 23 Feb 2017
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