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Understanding the fast crystallization kinetics of In–Sb–Te by using ultrafast calorimetry

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Abstract

Obtaining information about crystallization kinetics is crucial to understand the transformation speed of phase-change materials and select materials for phase-change memory. In the current work, we first investigated the temperature dependence of the resistance of undoped and In-doped Sb4Te films and found that the crystallization temperature (Tp) and 10-year data retention of Sb4Te increased significantly when it was doped with In. We further employed ultrafast differential scanning calorimetry to explore the crystallization kinetics of In-doped Sb4Te with various compositions, and found In20(Sb4Te)80 to have has the fastest crystallization rate (∼7.1 m s−1 at 726.2 K). The In20(Sb4Te)80 film exhibited a high Tp (∼503 K), better data retention ability (∼418.7 K for 10 years), and ultrafast crystallization with strong non-Arrhenius behavior. These results indicated In20(Sb4Te)80 to be a promising candidate for use in applications of phase change materials.

Graphical abstract: Understanding the fast crystallization kinetics of In–Sb–Te by using ultrafast calorimetry

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Publication details

The article was received on 12 Oct 2017, accepted on 27 Nov 2017 and first published on 29 Nov 2017


Article type: Communication
DOI: 10.1039/C7CE01787A
Citation: CrystEngComm, 2018, Advance Article
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    Understanding the fast crystallization kinetics of In–Sb–Te by using ultrafast calorimetry

    S. Mu, Y. Chen, H. Pan, G. Wang, J. Wang, R. Wang, X. Shen, S. Dai, T. Xu and Q. Nie, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C7CE01787A

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