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Understanding the Fast Crystallization Kinetics of In-Sb-Te by Ultrafast Calorimetry

Abstract

Crystallization kinetics is crucial to understand transformation speed of phase-change materials and select materials for phase-change memory. In the paper, we first investigated temperature dependent resistance in In-doped Sb4Te films and found that, the crystallization temperature (Tp) and 10-year data retention of Sb4Te increase significantly with In doping. We further employed ultrafast differential scanning calorimetry to explore the crystallization kinetics of In-doped Sb4Te, and found that In20(Sb4Te)80 component has the fastest crystallization rate (~ 7.1 m s-1 at 726.2 K). In20(Sb4Te)80 film exhibits high Tp (~ 503 K), better data retention ability (~ 418.7 K for 10 years), and ultrafast crystallization speed with strong non-Arrhenius behavior. All these indicate that, the In20(Sb4Te)80 is promising in the applications of phase change materials.

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Publication details

The article was received on 12 Oct 2017, accepted on 27 Nov 2017 and first published on 29 Nov 2017


Article type: Communication
DOI: 10.1039/C7CE01787A
Citation: CrystEngComm, 2017, Accepted Manuscript
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    Understanding the Fast Crystallization Kinetics of In-Sb-Te by Ultrafast Calorimetry

    S. Mu, Y. Chen, H. Pan, G. Wang, J. wang, R. wang, X. Shen, S. Dai, T. Xu and Q. Nie, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE01787A

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