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Issue 45, 2017
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Growth and characterization of all-inorganic lead halide perovskite semiconductor CsPbBr3 single crystals

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Abstract

As a typical representative of all-inorganic lead halide perovskites, cesium lead bromide (CsPbBr3) has attracted significant attention in the context of photovoltaics and other optoelectronic applications in recent years. In this paper, CsPbBr3 single crystal growth was conducted by a creative electronic dynamic gradient (EDG) method. The crystal structure was systematically investigated using scientific instruments and equipment. X-ray diffraction techniques, including X-ray diffraction (XRD), temperature-dependent X-ray powder diffraction and the X-ray rocking curve, were used to identify the phase and to investigate phase transition rules. Electron diffraction techniques, including high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and electron backscatter diffraction (EBSD), were used to investigate the crystal micro-structure. The final results indicated that the grown CsPbBr3 crystal was a perfect single crystal preferentially orienting in the (110) direction and met the basic demand of its applications.

Graphical abstract: Growth and characterization of all-inorganic lead halide perovskite semiconductor CsPbBr3 single crystals

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Publication details

The article was received on 26 Sep 2017, accepted on 12 Oct 2017 and first published on 13 Oct 2017


Article type: Paper
DOI: 10.1039/C7CE01709J
Citation: CrystEngComm, 2017,19, 6797-6803
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    Growth and characterization of all-inorganic lead halide perovskite semiconductor CsPbBr3 single crystals

    M. Zhang, Z. Zheng, Q. Fu, Z. Chen, J. He, S. Zhang, L. Yan, Y. Hu and W. Luo, CrystEngComm, 2017, 19, 6797
    DOI: 10.1039/C7CE01709J

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