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Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals

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Abstract

Two-dimensional (2D) materials have recently attracted great interest due to their promising optoelectronic applications. Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Large-sized bulk o-SiP single crystals have been successfully grown by a seeded flux method. The size and morphology of o-SiP crystals can be controlled by changing the growth conditions. The carrier mobility and band gap of o-SiP were characterized in detail. The photoresponse properties of o-SiP were investigated and a relatively fast response has been demonstrated. The experimental results indicate that o-SiP may be an excellent candidate for applications in electronics and optoelectronics.

Graphical abstract: Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals

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Publication details

The article was received on 20 Sep 2017, accepted on 30 Oct 2017 and first published on 30 Oct 2017


Article type: Paper
DOI: 10.1039/C7CE01676J
Citation: CrystEngComm, 2017, Advance Article
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    Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals

    C. Li, S. Wang, X. Zhang, N. Jia, T. Yu, M. Zhu, D. Liu and X. Tao, CrystEngComm, 2017, Advance Article , DOI: 10.1039/C7CE01676J

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