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Issue 46, 2017
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Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5−xGaxO12 garnet

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Abstract

UV emitting scintillating screens based on single crystalline films (SCFs) of Lu3Al5−xGaxO12:Pr garnet have been developed by the liquid phase epitaxy (LPE) growth method onto Y3Al5O12 (YAG) substrates using a lead-free BaO based flux. The absorbance, luminescence and scintillation properties of these SCFs have been investigated depending on the Ga content in the x = 0–1.9 range. We have found that the absorption and luminescence spectra of Pr3+ ions as well as the scintillation light yield (LY) and decay kinetics of Lu3Al5−xGaxO12 SCFs are non-linearly affected by the gallium concentration x in the mentioned solid solution due to preference for the distribution of Ga3+ and Al3+ ions between the tetrahedral and octahedral positions of the garnet host, respectively. The best scintillation properties of Lu3Al5−xGaxO12:Pr SCFs are achieved at the Ga content in the x = 1.0–1.2 range. The LY of the Lu3Ga1.2Al3.8O12:Pr SCF is comparable with the LY of the best reference LuAG:Pr single crystal counterpart and significantly (up to 3 times) overcomes the LY of LuAG:Pr and Lu3Al4–3.5Ga1.0–1.5O12 SCFs, grown onto the YAG substrates from the conventional PbO–B2O3 flux.

Graphical abstract: Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5−xGaxO12 garnet

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Publication details

The article was received on 26 Jul 2017, accepted on 09 Oct 2017 and first published on 09 Oct 2017


Article type: Paper
DOI: 10.1039/C7CE01376K
Citation: CrystEngComm, 2017,19, 7031-7040
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    Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5−xGaxO12 garnet

    V. Gorbenko, T. Zorenko, K. Paprocki, B. Machlovanyi, B. Mazalon, A. Fedorov, Ya. Zhydachevskyy, A. Suchocki and Yu. Zorenko, CrystEngComm, 2017, 19, 7031
    DOI: 10.1039/C7CE01376K

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