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Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5-xGaxO12 garnet

Abstract

The UV emitting scintillating screens based on the single crystalline films (SCF) of Lu3Al5-xGaxO12:Pr garnet have been developed by the liquid phase epitaxy (LPE) growth method onto Y3Al5O12 (YAG) substrates using the lead-free BaO based flux. The absorbance, luminescent and scintillation properties of these SCFs have been investigated depending on the Ga content in the x=0-1.9 range. We have found that the absorption and luminescence spectra of Pr3+ ions as well as the scintillation light yield (LY) and decay kinetics of Lu3Al5-xGaxO12 SCFs are non-linearly affected by the gallium concentration x in the mentioned solid solution due to preference in the distribution of Ga3+ and Al3+ ions between the tetrahedral and octahedral positions of the garnet host, respectively. The best scintillation properties of Lu3Al5-xGaxO12:Pr SCFs are achieved at the Ga content in the x=1.0-1.2 range. The LY Lu3Al3.8Ga1.2O12 SCF is comparable with the LY of the best reference LuAG:Pr single crystal counterpart and significantly (up to 3 times) overcomes the LY of LuAG:Pr and Lu3Al4-3.5Ga1.0-1.5O12 SCFs, grown on the YAG substrates from the conventional PbO-B2O3 flux.

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Publication details

The article was received on 26 Jul 2017, accepted on 09 Oct 2017 and first published on 09 Oct 2017


Article type: Paper
DOI: 10.1039/C7CE01376K
Citation: CrystEngComm, 2017, Accepted Manuscript
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    Epitaxial growth of single crystalline film scintillators based on the Pr3+ doped solid solution of Lu3Al5-xGaxO12 garnet

    Y. Zorenko, V. Gorbenko, T. Zorenko, K. Paprocki, B. Maglowany, B. Mazalon, A. Fedorov, Y. Zhydachevskii and A. Suchocki, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE01376K

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