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Hierarchical architecture of CuInS2 microspheres thin films: Altering laterally aligned crystallographic plane growth by Cd and V doping

Abstract

The pristine, cadmium (Cd) and vanadium (V) doped hierarchical architecture of copper indium disulphide, CuInS2 (CIS) microsphere thin films grown on spray coated seed layers by a wet-chemical method are demonstrated. First, the nano-flakes of self-assembled porous (NFSAP) - CIS microspheres have been optimized on a CIS seed layer by controlling the synthesis strategy. Later, Cd and V were incorporated as foreign impurity ions into the NFSAP - CIS microspheres. The pristine and doped CIS microsphere films result in a body-centered-tetragonal crystal structure that was confirmed from the XRD and SAED patterns. The electron microscope images clearly depict the formation of a solid and an elongated NFSAP - CIS microsphere under Cd and V doping, respectively. The change in the morphological structure was attributed to the suppression and expansion of the laterally oriented crystallographic plane. Chemical composition, optical and electrical properties of pristine, Cd and V doped CIS films were determined by UV-Vis, photoluminescence, XPS, and Hall measurements. Cd and V doped CIS microsphere films have superior photoelectric response compared to the pristine CIS films. The controlled laterally oriented crystallographic plane in CIS microspheres by doping induces the modification in the surface morphological structure that results in improved electrical and photo-physical properties. The results of this study provide a framework for fabricating an optimized CIS absorber layer in photovoltaic devices.

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Publication details

The article was received on 15 Jul 2017, accepted on 29 Sep 2017 and first published on 02 Oct 2017


Article type: Paper
DOI: 10.1039/C7CE01293D
Citation: CrystEngComm, 2017, Accepted Manuscript
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    Hierarchical architecture of CuInS2 microspheres thin films: Altering laterally aligned crystallographic plane growth by Cd and V doping

    L. T, R. Raliya, S. Kavadiya, P. Soundarrajan, S. Raman and P. Biswas, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE01293D

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