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Chemical Epitaxy of CdSe on GaAs


We have studied chemical bath deposited CdSe thin films on GaAs substrates. Films deposited on GaAs(100) showed a (001) textured polycrystalline zinc blende CdSe layer at the interface. On top of this layer, the stable form of wurtzite CdSe was obtained, where the CdSe grew in highly defective columnar crystals. The defects were mostly stacking-faults, which have been well-documented in the literature for CdSe due to polytypism. Deposition on GaAs(111)A and GaAs(111)B resulted in monocrystalline films of wurtzite CdSe oriented with their c-axis perpendicular to the substrate surface. The effect of pH value, growth time and temperature deposition parameters were investigated. At optimal pH value of 12.3, a linear growth rate was observed as a function of growth time. Arrhenius plots provided the activation energies associated with chemical bath deposition of CdSe on GaAs. Lowest activation energy for CdSe film formation was obtained on GaAs(111)B as compared to growth on GaAs(100) and GaAs(111)A substrates.

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Publication details

The article was received on 18 Jun 2017, accepted on 07 Aug 2017 and first published on 08 Aug 2017

Article type: Paper
DOI: 10.1039/C7CE01137G
Citation: CrystEngComm, 2017, Accepted Manuscript
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    Chemical Epitaxy of CdSe on GaAs

    O. Friedman, D. Korn, V. Ezersky and Y. Golan, CrystEngComm, 2017, Accepted Manuscript , DOI: 10.1039/C7CE01137G

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