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Issue 26, 2017
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Microstructural characterization of Cr-doped (Bi,Sb)2Te3 thin films

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Abstract

The presence of twins, both tilting and twisting of domains and resulting strain at domain boundaries in magnetically doped topological insulators can significantly modify their band topology and carrier density, and hence their electronic properties. In this paper, we report on a detailed microstructural characterization of Cr-doped (Bi,Se)2Te3 layers grown by molecular beam epitaxy on Si(111). We provide detailed microscopical descriptions of defects present in the films (twins, mosaicity tilt, mosaicity twist), and suggest ways to control their structural quality.

Graphical abstract: Microstructural characterization of Cr-doped (Bi,Sb)2Te3 thin films

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Publication details

The article was received on 08 May 2017, accepted on 13 Jun 2017 and first published on 13 Jun 2017


Article type: Paper
DOI: 10.1039/C7CE00872D
Citation: CrystEngComm, 2017,19, 3633-3639
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    Microstructural characterization of Cr-doped (Bi,Sb)2Te3 thin films

    N. V. Tarakina, S. Schreyeck, M. Duchamp, G. Karczewski, C. Gould, K. Brunner, R. E. Dunin-Borkowski and L. W. Molenkamp, CrystEngComm, 2017, 19, 3633
    DOI: 10.1039/C7CE00872D

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