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ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

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Abstract

n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects from the AlN potential barrier layer.

Graphical abstract: ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

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Publication details

The article was received on 15 Apr 2017, accepted on 25 Sep 2017 and first published on 25 Sep 2017


Article type: Communication
DOI: 10.1039/C7CE00722A
Citation: CrystEngComm, 2017, Advance Article
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    ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

    A. Ali, D. Wang, J. Wang, S. Jiao, F. Guo, Y. Zhang, S. Gao, S. Ni, C. Luan, D. Wang and L. Zhao, CrystEngComm, 2017, Advance Article , DOI: 10.1039/C7CE00722A

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